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PD- 91751A
IRG4IBC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* * * * Very Low 1.59V votage drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). * IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes * Tighter parameter distribution * Industry standard Isolated TO-220 FullpakTM outline
C
Fast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
n-ch an nel
Benefits
* Simplified assembly * Highest efficiency and power density * HEXFREDTM antiparallel Diode minimizes switching losses and EMI
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM Visol VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 20.3 11 120 120 8.5 120 2500 20 45 18 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC RJC RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight
Typ.
--- --- --- 2.0 (0.07)
Max.
2.8 4.1 65 ---
Units
C/W g (oz)
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3/26/99
IRG4IBC30FD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES Parameter Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Min. 600 --- --- --- --- Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage --- Forward Transconductance 6.1 Zero Gate Voltage Collector Current --- --- Diode Forward Voltage Drop --- --- Gate-to-Emitter Leakage Current --- Typ. --- 0.69 1.59 1.99 1.70 --- -11 10 --- --- 1.4 1.3 --- Max. Units Conditions --- V VGE = 0V, IC = 250A --- V/C VGE = 0V, I C = 1.0mA 1.8 IC = 17A VGE = 15V --- V IC = 31A See Fig. 2, 5 --- IC = 17A, TJ = 150C 6.0 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 250A --- S VCE = 100V, IC = 17A 250 A VGE = 0V, VCE = 600V 2500 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 12A See Fig. 13 1.6 IC = 12A, TJ = 150C 100 nA VGE = 20V
VGE(th)
VGE(th)/TJ
gfe ICES VFM IGES
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Diode Peak Reverse Recovery Current --- --- Diode Reverse Recovery Charge --- --- Diode Peak Rate of Fall of Recovery --- During tb --- Typ. 51 7.9 19 42 26 230 160 0.63 1.39 2.02 42 27 310 310 3.2 7.5 1100 74 14 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 77 IC = 17A 12 nC VCC = 400V See Fig. 8 28 VGE = 15V --- TJ = 25C --- ns IC = 17A, VCC = 480V 350 VGE = 15V, RG = 23 230 Energy losses include "tail" and --- diode reverse recovery. --- mJ See Fig. 9, 10, 11, 18 3.9 --- TJ = 150C, See Fig. 9, 10, 11, 18 --- ns IC = 17A, VCC = 480V --- VGE = 15V, RG = 23 --- Energy losses include "tail" and --- mJ diode reverse recovery. --- nH Measured 5mm from package --- VGE = 0V --- pF VCC = 30V See Fig. 7 --- = 1.0MHz 60 ns TJ = 25C See Fig. 120 TJ = 125C 14 IF = 12A 6.0 A TJ = 25C See Fig. 10 TJ = 125C 15 VR = 200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt 200A/s --- A/s TJ = 25C See Fig. --- TJ = 125C 17
2
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IRG4IBC30FD
16
F o r b o th :
LOAD CURRENT (A)
12
D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 13 W
S q u a re w a v e :
8
6 0% of rate d volta ge
I
4
Id e a l d io d e s
0 0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
1000
1000
I C , Collector-to-Emitter Current (A)
100
TJ = 25C
I C , Collector-to-Emitter Current (A)
100
T J = 150C
TJ = 150C T J = 25C
10
10
1 1
V G E = 15V 20s PULSE WIDTH
10
A
1 5 6 7 8 9
V C C = 50V 5s PULSE WIDTH A
10 11 12 13
VC E , Collector-to-Emitter Voltage (V)
VG E , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4IBC30FD
25
2.5
V G E = 15V 80s PULSE WIDTH I C = 34A
Maximum DC Collector Current(A)
20
V C E , Collector-to-Emitter Voltage (V)
15
2.0
10
I C = 17A
1.5
5
I C = 8.5A
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
TC , Case Temperature ( C)
T J , Junction Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 10 P DM t1 t2
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4IBC30FD
2000 VGE = 0V f = 1 MHz 20
1600
Coes = Cce + Cgc
V G E , Gate-to-Emitter Voltage (V)
A
Cies = Cge + Cgc + Cce Cres = Cce
SHORTED
VC E = 400V I C = 17A
16
C, Capacitance (pF)
1200
C ies
12
800
8
C oes
400
4
C res
0 1 10
0 0 10 20 30 40 50
A
60
100
V C E , Collector-to-Emitter Voltage (V)
Q g , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
2.20
Total Switchig Losses (mJ)
2.10
Total Switchig Losses (mJ)
VC C VG E TJ IC
= 480V = 15V = 25C = 17A
10
I C = 34A
I C = 17A
1
2.00
I C = 8.5A
1.90
1.80 0 20 40 60
A
80
0.1
R G = 23 V G E = 15V V C C = 480V
-60 -40 -20 0 20 40 60 80 100 120 140
A 160
R G, Gate Resistance (
)
TJ , Junction Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4IBC30FD
8.0 6.0
I C , C ollecto r-to -Em itter Cu rrent (A)
Total Switchig Losses (mJ)
RG TJ V CC V GE
= = = =
23 150C 480V 15V
1000
VG E E 2 0V G= T J = 12 5 C
100
S A FE O P E R A TIN G A R E A
4.0
10
2.0
0.0 0 10 20 30 40
A
1 1 10 100 1000
I C , Collector-to-Emitter Current (A)
V C E , Collecto r-to-E m itter V oltage (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )
TJ = 1 50 C
10
TJ = 1 25 C TJ = 25 C
1 0.4 0.8 1.2 1.6 2.0 2.4
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4IBC30FD
160 100
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
120
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
I F = 24 A I F = 1 2A
80
I IR R M - (A )
I F = 24 A
10
t rr - (ns)
I F = 12 A I F = 6.0 A
I F = 6 .0 A
40
0 100
d i f /d t - (A / s)
1000
1 100
1000
d i f /d t - (A / s )
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
600
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
400
d i(re c )M /d t - (A / s)
1000
Q R R - (n C )
IF = 6.0 A
I F = 2 4A I F = 1 2A
I F = 12 A
100
200
I F = 6.0 A
I F = 2 4A
0 100
d i f /d t - (A / s)
1000
10 100
1000
d i f /d t - (A / s)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4IBC30FD
Same ty pe device as D .U.T.
90%
80% of Vce
430F D .U .T.
Vge
VC
10% 90%
t d(off)
10% IC 5%
t d(on)
tr
tf t=5s Eon E ts = (Eon +Eoff ) Eoff
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id d t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t4 V d id d t t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4IBC30FD
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000 F 100 V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRG4IBC30FD
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 23 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. t = 60s, f = 60Hz
Notes:
Case Outline TO-220 FULLPAK
1 0 .6 0 (.4 1 7 ) 1 0 .4 0 (.4 0 9 ) o 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) -A3 .7 0 (.1 4 5 ) 3 .2 0 (.1 2 6 ) 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 )
2 .8 0 (.1 10 ) 2 .6 0 (.1 02 ) L E A D A S S IG N M E N T S LEAD ASSIGMENTS 1-G 1- GATE A T E 2 - D R A IN 2- COLLECTOR 3 - S OU 3- EMITTERR C E
7 .10 (.2 8 0 ) 6 .70 (.2 6 3 )
1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 )
1 .1 5 (.0 4 5 ) M IN . 1 2 3
NOTES: 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 .3 0 (.1 3 0 ) 3 .1 0 (.1 2 2 ) -B1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C D
A 1 .4 0 (.0 5 5 ) 3X 1 .0 5 (.0 4 2 ) 2 .5 4 (.1 0 0 ) 2X 0 .9 0 (.0 3 5 ) 3 X 0 .7 0 (.0 2 8 ) 0 .2 5 (.0 1 0) M AM B 3X 0 .4 8 (.0 1 9 ) 0 .4 4 (.0 1 7 )
B
2 .8 5 (.1 1 2 ) 2 .6 5 (.1 0 4 )
M IN IM U M C R E E P A G E D IS T A N C E B E T W E E N A -B -C -D = 4 .8 0 (.1 89 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/99
10
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